Analysis and Behavioral Study of Substrate Noise Coupling in Silicon Integrated Circuits
نویسندگان
چکیده
In this paper the behavioral study is presented on uniformly doped silicon substrate. Resistivity and thickness of substrate is varied and analyzed. It is observed that with the increase in resistivity and decrease in thickness of substrate, crosstalk problem existing in mixed circuits is reduced. FEM technology is used and HFSS simulation is done for S parameter extraction for 1000*1000*tμm2 sized substrate with two square contacts of size 50*50μm2, where‘t’ refers to thickness of substrate.
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